Bütün, SerkanGökkavas, MutluYu, HongBoStrupinski, VlodekÖzbay, Ekmel2016-02-082016-02-082009-101092-8081http://hdl.handle.net/11693/28602Date of Conference: 4-8 Oct. 2009Conference name: 2009 IEEE LEOS Annual Meeting Conference ProceedingsPhotodetectors on semi-insulating GaN templates were demonstrated. They exhibit lower dark current compared to photodetectors fabricated on regular GaN templates. Similar behavior observed in photodetectors fabricated on epitaxially thick SiC templates. © 2009 IEEE.EnglishGaN templateMetal semiconductor metal photodetectorSemi-insulating GaNWide-band-gap semiconductorGallium alloysGallium nitrideHeterojunctionsOptoelectronic devicesSemiconducting galliumSemiconducting gallium compoundsSilicon carbidePhotodetectorsConference Paper10.1109/LEOS.2009.5343292