Pintilie, L.Pentia, E.Matei, I.Pintilie, I.Özbay, Ekmel2015-07-282015-07-282002-05-010021-8979http://hdl.handle.net/11693/11214Lead sulfide (PbS) thin films were deposited from a chemical bath onto SiO2/Si (n-type) substrates. Pseudo-metal-oxide-semiconductor devices were obtained by evaporating source and drain gold electrodes on a PbS surface and aluminum gate electrode on a Si substrate. Field-effect-assisted photoconductivity in the PbS layer was investigated at room temperature, in the 800-2700-nm-wavelength domain for different values and polarities of the drain and gate voltages. The best results were obtained for a positive gate, when both semiconductors are in depletion. An enhancement of about 25% of the photoconductive signal is obtained compared with the case when the gate electrode is absent or is not used. A simple model is proposed that explains the behavior of the dark current and photoconductive signal in PbS film with changing the gate voltage. (C) 2002 American Institute of Physics.EnglishThin-filmsGrowthArticle10.1063/1.1468277