Bennett, C. R.Tanatar, BilalConstantinou, N. C.2016-02-082016-02-0819960038-1098http://hdl.handle.net/11693/25797We present a fully dynamical and finite temperature study of the hot-electron momentum relaxation rate and the power loss in a coupled system of electron-hole plasma and bulk LO-phonons in a quantum wire structure. Interactions of the scattered electron with neutral plasma components and phonons are treated on an equal footing within the random-phase approximation. Coupled mode effects substantially change the transport properties of the system at low temperatures. Particularly, the "plasmon-like" and "LO-phonon-like" excitations yield comparable rates which, as a consequence of the singular nature of the ID density of states, can be large at the threshold. This is in contrast to room temperature results where only the LO-phonon mode contributes significantly to the rate. The density and temperature dependence of the power loss reveals that dynamical screening effects are important, and energy-momentum conservation cannot be satisfied above a certain density for a given initial energy.EnglishApproximation theoryElectron energy levelsElectron scatteringElectron transport propertiesElectronic density of statesEnergy conservationHot carriersPhononsRandom processesRelaxation processesSemiconductor device structuresDynamical screening effectsElectron hole plasmaEnergy momentum conservationHot electron momentum relaxationHot electron scatteringNeutral plasma componentsPhotoexcited quasi one dimensional structurePlasmon phonon couplingPower lossRandom phase approximationSemiconductor quantum wiresArticle10.1016/0038-1098(96)00266-9