Basa, P.Petrik, P.Fried, M.Dâna, AykutluAydınlı, AtillaFoss, S.Finstad, T. G.2016-02-082016-02-082008-051862-6351http://hdl.handle.net/11693/26811Ge-rich SiO2 layers on top of Si substrates were deposited using plasma enhanced chemical vapour deposition. Ge nanocrystals embedded in the SiO2 layers were formed by high temperature annealing. The samples were measured and evaluated by spectroscopic ellipsometry. Effective medium theory (EMT) and parametric semiconductor models have been used to model the dielectric function of the layers. Systematic dependences of the layer thickness and the oscillator parameters have been found on the annealing temperature (nanocrystal size).EnglishAnnealing temperaturesDielectric functionsEffective medium theoriesGe nanocrystalsHigh-temperature annealingLayer thicknessNanocrystal sizesOscillator parametersParametric modelsPlasma enhanced chemical vapour depositionSemiconductor modelSi substratesGermaniumPlasma depositionSilicon compoundsSpectroscopic ellipsometryNanocrystalsArticle10.1002/pssc.200777773