Zafar, SalahuddinOsmanoğlu, SinanÖztürk, MustafaÇankaya, BüşraYılmaz, DoğanKashif, A. U.Özbay, Ekmel2021-03-032021-03-03202097817281467752151-1403http://hdl.handle.net/11693/75713Date of Conference: 14-18 January 2020Conference Name: 17th International Bhurban Conference on Applied Sciences and Technology, IBCAST 2020In this paper, we report two low noise broadband amplifiers based on ABMN's AlGaN/GaN on SiC HEMT technology for X-band applications. Two design topologies, a single-stage (LNA-1) and a two-stage (LNA-2), have been investigated. LNA-1 and the first stage of LNA-2 is based on common source (CS) with inductive source degeneration topology. LNA-1 has a flat gain response of ±1.4 dB gain variation with a gain greater than 8 dB for 9 V drain voltage and 100 mA/mm drain current. Input return loss better than 9.8 dB and output return loss better than 12.8 dB have been achieved. The simulated value of noise figure for this design is less than 1.4 dB. In LNA-2 design, a two-stage topology is implemented to enhance amplifier's gain. The simulated values for LNA-2 show a gain greater than 16.8 dB with ±2.9 dB gain variation. Input and output return loss values are better than 8.8 dB and 10 dB, respectively. The value of noise figure for this design is less than 1.7 dB in the desired frequency range. Both designs, having state-of-the art small dimensions, are suitable for their potential applications for space communications, Radar, satellite communications etc.EnglishGallium NitrideHEMTBroadbandFlat gainLNAMMICX-bandSiCConference Paper10.1109/IBCAST47879.2020.904456997817281467682151-1411