Alouani, I.Ahangari, HamzehÖztürk, ÖzcanNiar, S.2018-04-122018-04-122016-08-09http://hdl.handle.net/11693/37753Date of Conference: 31 Aug.-2 Sept. 2016Conference name: 2016 Euromicro Conference on Digital System Design (DSD)Technology shift and voltage scaling increased the susceptibility of Static Random Access Memories (SRAMs) to errors dramatically. In this paper, we present NS-SRAM, for Neighborhood Solidarity SRAM, a new technique to enhance error resilience of SRAMs by exploiting the adjacent memory bit data. Bit cells of a memory line are paired together in circuit level to mutually increase the static noise margin and critical charge of a cell. Unlike existing techniques, NS-SRAM aims to enhance both Bit Error Rate (BER) and Soft Error rate (SER) at the same time. Due to auto-adaptive joiners, each of the adjacent cells' nodes is connected to its counterpart in the neighbor bit. NS-SRAM enhances read-stability by increasing critical Read Static Noise Margin (RSNM), thereby decreasing faults when circuit operates under voltage scaling. It also increases hold-stability and critical charge to mitigate soft-errors. By the proposed technique, reliability of SRAM based structures such as cache memories and register files can drastically be improved with comparable area overhead to existing hardening techniques. Moreover it does not require any extra-memory, does not impact the memory effective size, and has no negative impact on performance. © 2016 IEEE.EnglishReliabilitySNMSoft errorsSRAMBit error rateCache memoryComputer controlDigital storageError correctionErrorsRadiation hardeningRandom access storageRandom errorsReliabilitySystems analysisVoltage scalingError resilienceRead static noise margin (RSNM)Reliability enhancementSoft errorSoft error rateStatic noise marginStatic random access memoryTechnology shiftStatic random access storageConference Paper10.1109/DSD.2016.12