Ballı, Çağdaş2017-12-082017-12-082015-072015-072015-07http://hdl.handle.net/11693/35659Cataloged from PDF version of article.Thesis (M.S.): Bilkent University, Department of Electrical and Electronics Engineering, İhsan Doğramacı Bilkent University, 2015.Includes bibliographical references (leaves 58).X-Band, which is defined as the frequency range from 8 GHz to 12 GHz by IEEE, is used for the applications such as satellite communications, radar and space communications. These applications require an input matched, high gain and low noise amplifier as a front-end component in their receiver chains. In this work, an input matched X-Band balanced low noise amplifier is designed and implemented by using GaAs HJ-FET transistor. Measurements of the fabricated amplifier show a maximum noise figure of 1.74 dB, a minimum gain of 12.1 dB and a minimum input return loss of 11.4 dB from 8.2 GHz to 8.4 GHz.x, 58 leaves : illustrations, charts ; 30 cmEnglishinfo:eu-repo/semantics/openAccessLow noice amplifierBalanced amplifierNoise figureTK7871.2 .B35 2015ThesisB150941