Bıyıklı, NecmiKimukin, I.Kartaloglu, T.Aytur, O.Özbay, Ekmel2016-02-082016-02-0820030003-6951http://hdl.handle.net/11693/24499AlGaN/GaN-based high-speed solar-blind photodetectors were discussed. Current-voltage, spectral responsivity, and high-frequency response characterizations were performed. Breakdown voltages larger than 40 V were obtained. A maximum responsivity of 44 mA/W at 263 nm was measured. True solar-blind detection was also ensured.EnglishBandwidthCurrent voltage characteristicsElectric breakdownElectric contactsQuantum efficiencySemiconducting aluminum compoundsSpectral responsivityPhotodetectorsArticle10.1063/1.1566459