Okyay, Ali KemalOruç, Feyza B.Çimen, FurkanAygün, Levent E.2016-02-082016-02-0820130277-786Xhttp://hdl.handle.net/11693/28011Date of Conference: 3–6 February 2013Conference name: Proceedings of SPIE, Oxide-based Materials and Devices IVIn this study, TiO2 films were deposited using thermal Atomic Layer Deposition (ALD) system. It is observed that asdeposited ALD TiO 2 films are amorphous and not suitable as TFT channel material. In order to use the film as channel material, a post-annealing process is needed. Annealed films transform into a polycrystalline form containing mixed anatase and rutile phases. For this purpose, devices are annealed at 475°C and observed that their threshold voltage value is 6.5V, subthreshold slope is 0.35 V/dec, Ion/Ioff ratios 2.5×106 and mobility value is 0.672 cm2/V.s. Optical response measurements showed that devices exhibits decent performance at ultraviolet region where TiO 2 has band to band absorption mechanism. © 2013 SPIE.EnglishAtomic Layer DepositionThin Film TransistorsTitanium DioxideTransparent ElectronicsAbsorption mechanismsChannel materialsOptical responsePolycrystallinePost annealingSubthreshold slopeTransparent electronicsUltraviolet regionAmorphous filmsAmorphous materialsDepositionOxide mineralsThin film transistorsTitanium dioxideAtomic layer depositionConference Paper10.1117/12.2005528