Sezen, H.Özbay, EkmelAktas, O.Süzer, Şefik2016-02-082016-02-0820110003-6951http://hdl.handle.net/11693/21989Transient surface photovoltage (SPV) of n and p-GaN was measured using x-ray photoelectron spectroscopy (XPS) with a time resolution of 0.1 s. The measured SPV transients for both n- and p-GaN are 0.1 s, and for the n-GaN they are not affected by flood-gun electrons. However, for the p-GaN, the transient character of the SPV is dramatically changed in the presence of flood-gun electrons. The combination of time-resolved XPS, flood gun, and laser illumination give us a new way to study the surface electronic structure and other surface properties of semiconducting materials in a chemically specific fashion.EnglishLaser illuminationSemiconducting materialsSurface electronic structuresSurface photovoltagesTime resolutionTime-resolvedXPSElectronic structureGallium nitridePhotoelectricityPhotonsSurface propertiesSurface structureX ray photoelectron spectroscopyArticle10.1063/1.35648921077-3118