Tiras, E.Ardali, S.Tiras, T.Arslan, E.Cakmakyapan, S.Kazar, O.Hassan, J.Janzén, E.Özbay, Ekmel2016-02-082016-02-082013-01-250021-8979http://hdl.handle.net/11693/21109Shubnikov-de Haas (SdH) and Hall effect measurements performed in a temperature range between 1.8 and 275 K, at an electric field up to 35 kV m -1 and magnetic fields up to 11 T, have been used to investigate the electronic transport properties of monolayer graphene on SiC substrate. The number of layers was determined by the use of the Raman spectroscopy. The carrier density and in-plane effective mass of electrons have been obtained from the periods and temperature dependencies of the amplitude of the SdH oscillations, respectively. The effective mass is in good agreement with the current results in the literature. The two-dimensional (2D) electron energy relaxations in monolayer graphene were also investigated experimentally. The electron temperature (Te) of hot electrons was obtained from the lattice temperature (TL) and the applied electric field dependencies of the amplitude of SdH oscillations. The experimental results for the electron temperature dependence of power loss indicate that the energy relaxation of electrons is due to acoustic phonon emission via mixed unscreened piezoelectric interaction and deformation-potential scattering.EnglishAcoustic phononsEffective massElectric field dependenciesElectron energiesElectronic transport propertiesEnergy relaxationHall effect measurementLattice temperaturesNumber of layersPower-lossesShubnikov-de HaasSiC substratesTemperature dependenceTemperature dependenciesTemperature rangeElectric fieldsElectron temperatureMonolayersRaman spectroscopySemiconducting indium compoundsSilicon carbideTransport propertiesGrapheneArticle10.1063/1.4789385