Sarı, EmreAkyuz, ÖzgünChoi, E. -G.Lee I.-H.Baek J.H.Demir, Hilmi Volkan2016-02-082016-02-082010http://hdl.handle.net/11693/28501Date of Conference: 7-11 Nov. 2010Crystal material quality is fundamentally important for optoelectronic devices including laser diodes and light emitting diodes. To this end epitaxial lateral overgrowth (ELO) has proven to be a powerful technique for reducing dislocation density in GaN and its alloys [1,2]. Implementation and design of ELO process is, however, critical for obtaining high-quality material with high-efficiency quantum structures for light emitters [3]. ©2010 IEEE.EnglishControlled growthCrystal materialDislocation densitiesEpitaxial lateral overgrowthHigh efficiencyHigh-quality materialsInGaN/GaNLaser diodesLight emittersQuantum heterostructuresQuantum structureDislocations (crystals)Gallium alloysGallium nitrideLight emissionLight emitting diodesOptoelectronic devicesEpitaxial growthConference Paper10.1109/PHOTONICS.2010.5698873