Tut, TurgutGökkavas, MutluÖzbay, Ekmel2016-02-082016-02-0820081862-6351http://hdl.handle.net/11693/26778We report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1570 under ultraviolet illumination. The solar-blind photodetectors have a sharp cut-off around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 femto-amperes for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.EnglishAvalanche gainsCut-offDetectivityResponsivityReverse biasSolar-blind photodetectorsUltraviolet illuminationNitridesOptoelectronic devicesSemiconductor diodesPhotodetectorsArticle10.1002/pssc.200778735