Okyay, Ali KemalOnbaşlı, M. CengizErcan, BurcuYu H.-Y.Ren, S.Miller, D.A.B.Saraswat, K.C.Nayfeh, A.M.2016-02-082016-02-0820091092-8081http://hdl.handle.net/11693/28601Date of Conference: 4-8 Oct. 2009Monolithic Germanium photodetectors integrated on Si with external efficiency up to 68% at 1550nm and low dark current density 3.2mA/cm2 are demonstrated. The absorption edge red shifted by 47nm corresponding to bandgap energy reduced by 24meV. © 2009 IEEE.English1550 nmAbsorption edgesBand gap energyExternal efficiencyHigh efficiencyNear InfraredRed-shiftedGermaniumOptoelectronic devicesPhotodetectorsIntegrated optoelectronicsConference Paper10.1109/LEOS.2009.5343246