Bennett, C. R.Tanatar, BilalConstantinou, N. C.Babiker, M.2016-02-082016-02-0819940038-1098http://hdl.handle.net/11693/25987The effect of cross-sectional geometry on both the intrasubband plasmon and intersubband plasmon of a quantum wire is investigated within a two-subband RPA scheme. Exact analytical electronic wavefunctions for circular, elliptical and rectangular wires are employed within the infinite barrier approximation. It is found that for fixed cross-sectional area and linear electron concentration, the intrasubband plasmon energy is only marginally dependent on the wire geometry whereas the intersubband plasmon energy may change considerably due to its dependence on the electronic subband energy difference. © 1994.EnglishA. nanostructuresA. semiconductorsD. dielectric responseApproximation theoryElectromagnetic dispersionElectromagnetic wavesElectron energy levelsGeometryMathematical modelsMatrix algebraQuantum theorySemiconductor device structuresWaveform analysisCross sectional geometryDielectric responseElectronic subband energy differenceElectronic wavefunctionsFixed cross sectional areaInfinite barrier approximationLinear electron concentrationPlasmonsQuantum wiresSemiconductor quantum wellsEffect of cross-sectional geometry on the RPA plasmons of quantum wiresArticle10.1016/0038-1098(94)90018-3