Tansel, T.Kutluer, K.Salihoglu, Ö.Aydınlı, AtillaAslan, B.Arikan, B.Kilinc, M. C.Ergun, Y.Serincan, U.Turan, R.2016-02-082016-02-0820121041-1135http://hdl.handle.net/11693/21496The authors describe the noise characterization of a mid-wavelength- infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO 2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 μm and the specific detectivity as high as 1.23 × 10 12 cm. Hz 1/2 W , demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si 3N 4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO 2-passivated ones.EnglishInAs/GaSbMid-wave-infrared photodiodeNoise characterizationPassivation1/F noiseCutoff wavelengthsDesign structureFrequency-dependentGallium antimonideHigh qualityNoise suppressionPassivation layerPeak responsivitySpecific detectivityGallium alloysInfrared radiationMolecular beam epitaxyPhotodiodesSuperlatticesPassivationArticle10.1109/LPT.2012.2188504