Caliskan, D.Butun, B.Ozcan, S.Özbay, Ekmel2015-07-282015-07-282013-03-062166-2746http://hdl.handle.net/11693/10877TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal–semiconductor–metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 × 10−9 A/cm2 at 5 V bias and 1.73 A/W at 50 V bias, respectively. Breakdown is not observed up to 50 V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps.EnglishPhotodiodesArticle10.1116/1.47945262166-2754