Ozgit Akgun, C.Goldenberg, E.Bolat, S.Tekcan, B.Kayaci, F.Uyar, TamerOkyay, Ali KemalBıyıklı, Necmi2016-02-082016-02-0820151862-6351http://hdl.handle.net/11693/23569Hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD) is a promising technique for obtaining III-nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA-ALD processes for III-nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6,6-GaN core-shell nanofibers, proof-of-concept thin film transistors and UV photodetectors fabricated using HCPA-ALD-grown GaN layers, as well as InN thin films deposited by HCPA-ALD using cyclopentadienyl indium and trimethylindium precursors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.EnglishAlNGaNInNAtomic layer deposition (ALD)Hollow cathode plasmaAluminum nitrideAtomsCathodesDepositionElectrodesElectron sourcesGallium nitrideIndiumNanostructuresNitridesPulsed laser depositionTemperatureThin film transistorsCore-shell nanofibersCyclopentadienylsHollow cathodesLow impurity concentrationsUV photodetectorsArticle10.1002/pssc.201400167