Excitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dots

Yeltik A.Guzelturk, B.Hernandez-Martinez, P. L.Akhavan S.Demir, Hilmi Volkan2016-02-082016-02-0820130003-6951http://hdl.handle.net/11693/26693We report enhanced sensitization of silicon through nonradiative energy transfer (NRET) of the excitons in an energy-gradient structure composed of a cascaded bilayer of green- and red-emitting CdTe quantum dots (QDs) on bulk silicon. Here NRET dynamics were systematically investigated comparatively for the cascaded energy-gradient and mono-dispersed QD structures at room temperature. We show experimentally that NRET from the QD layer into silicon is enhanced by 40% in the case of an energy-gradient cascaded structure as compared to the mono-dispersed structures, which is in agreement with the theoretical analysis based on the excited state population-depopulation dynamics of the QDs. © 2013 AIP Publishing LLC.EnglishBulk siliconCascaded structureCdte quantum dots (QDs)Mono-dispersedNonradiative energy transferRed-emittingRoom temperatureSilicon throughCascade control systemsEnergy transferStainless steelSiliconExcitonic enhancement of nonradiative energy transfer to bulk silicon with the hybridization of cascaded quantum dotsArticle10.1063/1.4858384