Gökkavas, M.Dosunmu, O.Ünlü, M. S.Ulu, G.Mirin, R. P.Christensen, D. H.Özbay, Ekmel2015-07-282015-07-2820011041-1135http://hdl.handle.net/11693/11191In this letter, we report AlGaAs–GaAs p-i-n photodiodes with a 3-dB bandwidth in excess of 10 GHz for devices as large as 60- m diameter. Resonant cavity enhanced photodetection is employed to improve quantum efficiency, resulting in more than 90% peak quantum efficiency at 850 nm.EnglishHigh-speed optoelectronicsPhotodetectorsPhotodiodesPin diodesHigh-speed high-efficiency large-area resonant cavity enhanced p-i-n photodiodes for multimode fiber communicationsArticle10.1109/68.969904