Özcan, Ayşe2016-01-082016-01-082014http://hdl.handle.net/11693/16002Ankara : The Department of Material Science and Nanotechnology and The Graduate School of Engineering and Science of Bilkent University, 2014.Thesis (Master's) -- Bilkent University, 2014.Includes bibliographical references leaves 30-34.Resistive switching memories are potential candidates for next generation nonvolatile memory device applications due to natural simplicity in structure, fast switching speed, long retention time, low power consumption, suitability for 3D integration, excellent scalability and CMOS compatibility. However, the atomic scale mechanisms behind resistive switching are still being debated. In this work we investigate resistive switching mechanisms in ZnO and AlN thin films. The structural and physical changes in ZnO thin films during resistive switching are investigated via TEM, EDX, EFTEM techniques. We also investigate application of resisitive switching to reconfigurable optical surfaces. Recently, resistive switching in nitride films such as AlN is attracting increasing attention. The wide band gap, high electrical resistivity, and high thermal conductivity of AlN make it a good candidate for a resistive switching memory device. We report self-compliant resistive switching behavior in AlN films which is deposited by atomic layer deposition.xii, 34 leaves, illustrations, graphicsEnglishinfo:eu-repo/semantics/openAccessResistive Switching MemoryZnOAlNTEMEDXTK7871.96.T45 O93 2014Thin film transistors.Thin films.Zinc oxide.Thesis