Zhang Z.-H.Li, W.Ju, Z.Tan S.T.Ji Y.Kyaw, Z.Zhang X.Wang, L.Sun, X. W.Demir, Hilmi Volkan2015-07-282015-07-2820140003-6951http://hdl.handle.net/11693/12816InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.EnglishLight-emitting-diodesHeterostructuresArticle10.1063/1.48838941077-3118