Keleş, Ü.Liedke, B.Heinig, Karl-Heinz.Bulutay, C.2015-07-282015-07-2820130003-6951http://hdl.handle.net/11693/10766Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.EnglishBottom up approachBranched nanostructuresEnd-productsPseudopotentialsSi nanowireSilicon nanowiresSubsystem levelTop-down designsElectronic propertiesElectronic structureSiliconNanowiresArticle10.1063/1.48300391520-8842