Ul Hassan J.Meyer, A.Çakmakyapan, SemihKazar, ÖzgürFlege J.I.Falta J.Özbay, EkmelJanzén, E.2016-02-082016-02-0820130255-5476http://hdl.handle.net/11693/28021The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions. © (2013) Trans Tech Publications, Switzerland.EnglishAtomic force microscopyCarrier mobilityGrapheneHydrogen intercalationLow energy electron microscopySurface morphologyGraphene growthGraphene layersGraphene propertiesHydrogen intercalationIn-situ etchingIn-vacuumLow energy electron microscopySubstrate surfaceSubstrate surface preparationSurface evolutionSurface preparationEtched substratesGraphene propertiesHydrogen intercalationLow energy electron microscopySubstrate surfaceSubstrate surface preparationSurface evolutionSurface preparationAtomic force microscopyCarrier mobilityElectron microscopySilicon carbideSurface morphologyAtomic force microscopyCarrier mobilityElectronsSilicon carbideSubstratesSurface morphologyGrapheneGrapheneSurface evolution of 4H-SiC(0001) during in-situ surface preparation and its influence on graphene propertiesArticle10.4028/www.scientific.net/MSF.740-742.157