Ardalı, S.Tiras, E.Arslan, E.Özbay, Ekmel2018-04-122018-04-1220160015-0193http://hdl.handle.net/11693/36973The quantum Hall effect measurements in the AlInN/AlN/GaN heterostructure are studied in the temperature range from 1.8 K to 14 K and a magnetic field up to 11 T. The quantized two-dimensional electron gas was placed at the AlN/GaN interface. The Hall resistance of two-dimensional electron gas has been found to be quantized at multiple integers of von Klitzing constant that refers to the integer quantum Hall effect. The experimental data have been used to determine the Fermi energy, carrier density, and effective mass two-dimensional electrons. The results are in agreement with those derived from the longitudinal magnetoresistance in the same structure.EnglishEffective massGaNQuantum hall effectArticle1563-5112