Tekcan, B.Ozgit Akgun, C.Bolat, S.Bıyıklı, NecmiOkyay, Ali Kemal2016-02-082016-02-0820140091-3286http://hdl.handle.net/11693/25292Proof-of-concept, first metal-semiconductor-metal ultraviolet photodetectors based on nanocrystalline gallium nitride (GaN) layers grown by low-temperature hollow-cathode plasma-assisted atomic layer deposition are demonstrated. Electrical and optical characteristics of the fabricated devices are investigated. Dark current values as low as 14 pA at a 30 V reverse bias are obtained. Fabricated devices exhibit a 15× UV/VIS rejection ratio based on photoresponsivity values at 200 nm (UV) and 390 nm (VIS) wavelengths. These devices can offer a promising alternative for flexible optoelectronics and the complementary metal oxide semiconductor integration of such devices. © 2014 Society of Photo-Optical Instrumentation Engineers (SPIE).EnglishDepositionOptoelectronicsPhotodetectorsUltravioletAtomic layer depositionDepositionGallium nitrideMetalsMOS devicesOptoelectronic devicesPhotodetectorsPhotonsPulsed laser depositionTemperatureComplementary metal oxide semiconductorsFlexible optoelectronicsGallium nitrides (GaN)Metal semiconductor metalOptical characteristicsPhotoresponsivityUltra-violet photodetectorsUltravioletSemiconductor devicesArticle10.1117/1.OE.53.10.107106