Gasanly, N. M.Aydınlı, AtillaYüksek, N. S.Salihoglu, Ö.2016-02-082016-02-0820030947-8396http://hdl.handle.net/11693/24449Nominally undoped p-GaS layered single crystals were grown using the Bridgman technique. Thermally stimulated current measurements in the temperature range 10-300 K were performed at a heating rate of 0.10 K/s. The analysis of the data revealed six trap levels at 0.05, 0.06, 0.12, 0.63, 0.71, and 0.75 eV. The calculations for these traps yielded 1.2 × 10-21, 2.9 × 10-23, 2.4 × 10-21, 8.0 × 10-9, 1.9 × 10-9 and 4.3 × 10-10 cm2 for the capture cross sections and 1.6 × 1013, 5.0 × 1012, 7.3 × 1012, 1.2 × 1014, 8.9 × 1013 and 2.6 × 1013 cm-3 for the concentrations, respectively.EnglishCalculationsCrystal growthElectric current measurementElectron trapsSingle crystalsThermal effectsBridgman techniqueGallium sulfideThermally stimulated current measurementsTrapping centersSemiconducting gallium compoundsArticle10.1007/s00339-002-2035-y