Akça, İmran. B.Dâna, AykutluAydınlı, AtillaRossetti, M.Li, L.Fiore, A.Dağlı, N.2016-02-082016-02-082008http://hdl.handle.net/11693/26818Date of Conference: 11-13 June 2008Conference Name: 14th European Conference on Integrated Optics, ECIO 2008The linear electro-optic properties in waveguides containing self-organized In As quantum dots were studied experimentally. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs.EnglishIndium arsenideIntegrated circuitsIntegrated opticsModulationOptical materialsOptical waveguidesPhotonicsQuantum electronicsWaveguidesInAs/GaAsOptic modulationsOptic propertiesQuantum dotsSemiconductor quantum dotsConference Paper