Akca, B. ImranDana, AykutluAydınlı, AtillaRossetti, M.Li L.Dagli, N.Fiore, A.2016-02-082016-02-0820072162-2701http://hdl.handle.net/11693/27121Date of Conference: 6-11 May 2007The electro-optic coefficients of self-organized InAs quantum dot layers in molecular beam epitaxy grown laser structures in reverse bias have been investigated. Enhanced electrooptic coefficients compared to bulk GaAs were observed. © 2003 Optical Society of America.EnglishElectrooptical devicesMolecular beam epitaxySemiconductor quantum dotsElectro optic coefficientGaAsInAs quantum dotsLaser structuresLinear electro-optic coefficientsReverse biasIndium arsenideLinear electro-optic coefficient in multilayer self-organized InAs quantum dot structuresConference Paper10.1109/QELS.2007.4431212