El-Atab, N.Özcan, AyşeAlkış, SabriOkyay, Ali KemalNayfeh, A.2016-02-082016-02-082014-08http://hdl.handle.net/11693/28696Date of Conference: 18-21 Aug. 2014In this work, the effect of embedding Silicon Nanoparticles (Si-NPs) in ZnO based charge trapping memory devices is studied. Si-NPs are fabricated by laser ablation of a silicon wafer in deionized water followed by sonication and filtration. The active layer of the memory was deposited by Atomic Layer Deposition (ALD) and spin coating technique was used to deliver the Si-NPs across the sample. The nanoparticles provided a good retention of charges (>10 years) in the memory cells and allowed for a large threshold voltage (Vt) shift (3.4 V) at reduced programming voltages (1 V). The addition of ZnO to the charge trapping media enhanced the electric field across the tunnel oxide and allowed for larger memory window at lower operating voltages. © 2014 IEEE.EnglishAtomic layer depositionCharge trappingDeionized waterElectric fieldsLaser ablationNanoparticlesSiliconSynthesis (chemical)Threshold voltageWater filtrationZinc oxideActive LayerCharge trapping memoryMemory windowOperating voltageProgramming voltageSi nanoparticlesSilicon nanoparticlesTunnel oxidesSilicon wafersConference Paper10.1109/NANO.2014.6968168