Bıyıklı, NecmiKimukin, İbrahimKartaloğlu, TolgaAytür, OrhanÖzbay, Ekmel2016-02-082016-02-0820031610-1634http://hdl.handle.net/11693/27489Conference name: Proceedings of the 5th International Conference on Nitride Semiconductors (ICNS‐5)Solar-blind AlGaN metal-semiconductor-metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10-6 A/cm 2 at 40 V reverse bias. Photoconductive gain-assisted photoresponse was observed with a peak responsivity of 1.26 A/W at 264 nm. A visible rejection of ∼3 orders of magnitude at 350 nm was demonstrated. Temporal high-speed measurements at 267 nm resulted in fast pulse responses with 3-dB bandwidths as high as 5.4 GHz. This corresponds to a record high-speed performance for solar-blind detectors. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.EnglishFabrication processHigh speed measurementsHigh-speed performanceMetal semiconductor metal photodetectorOrders of magnitudePeak responsivityPhotoresponsesSolar-blind detectorsBandwidthNitridesPhotonsPhotodetectorsConference Paper10.1002/pssc.200303518