Butun, S.Cinel, N. A.Özbay, Ekmel2015-07-282015-07-2820121094-4087http://hdl.handle.net/11693/12338The integration of nano structures with opto-electronic devices has many potential applications. It allows the coupling of more light into or out of the device while decreasing the size of the device itself. Such devices are reported in the VIS and NIR regions. However, making plasmonic structures for the UV region is still a challenge. Here, we report on a UV nano-antenna integrated metal semiconductor metal (MSM) photodetector based on GaN. We designed and fabricated Al grating structures. Well defined plasmonic resonances were measured in the reflectance spectra. Optimized grating structure integrated photodetectors exhibited more than sevenfold photocurrent enhancement. Finite difference time domain simulations revealed that both geometrical and plasmonic effects played role in photocurrent enhancement. (C) 2012 Optical Society of AmericaEnglishExtraordinary Optical-transmissionEvanescent-wave ModelHole ArraysSemiinsulating GanAbsorptionEnhancementFilmsArticle10.1364/OE.20.002649