Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

Atmaca, G.Elibol, K.Lisesivdin, S. B.Kasap, M.Özbay, Ekmel2019-02-012019-02-012009-051454-4164http://hdl.handle.net/11693/48719We explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron mobility transistors. Investigations were carried out by solving nonlinear Schrodinger-Poisson equations, self-consistently including polarization induced carriers that are important for GaN-based heterostructures and twodimensional electron gas (2DEG) formation. Strain relaxation limits were also calculated, in which optimized cases were found for the investigated Al-mole fraction and thickness values under pseudomorphic limits. The effect of the investigated thickness changes on electron probability densities show no important change in the overall simulations. In addition to a carrier increase in the selected optimum cases, reasonable mobility behavior is also expected.EnglishAlGaNDCHEMTHEMTSchrödingerPoisson2DEGNumerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)Article1841-7132