Yu, H.-Y.Ren, S.Jung, W. S.Okyay, Ali KemalMiller, D. A. B.Saraswat, K. C.2016-02-082016-02-0820090741-3106http://hdl.handle.net/11693/22596We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy for the purpose of monolithic integration. An enhanced efficiency in the near-infrared regime and the absorption edge shifting to longer wavelength is achieved due to 0.14% residual tensile strain in the selective-area-grown Ge. The responsivities at 1.48, 1.525, and 1.55 μ are 0.8, 0.7, and 0.64 A/W, respectively, without an optimal antireflection coating. These results are promising toward monolithically integrated on-chip optical links and in telecommunications. © 2009 IEEE.EnglishGermaniumPhotodiodeSelectiveStrainTensileArticle10.1109/LED.2009.20309051558-0563