Akça, İmran B.Dâna, AykutluAydınlı, AtillaTuran, R.2016-02-082016-02-082008-020003-6951http://hdl.handle.net/11693/23204Electron and hole charge and discharge dynamics are studied on plasma enhanced chemical vapor deposition grown metal-oxide-silicon germanium nanocrystal flash memory devices. Electron and hole charge and discharge currents are observed to differ significantly and depend on annealing conditions chosen for the formation of nanocrystals. At low annealing temperatures, holes are seen to charge slower but to escape faster than electrons. They discharge slower than electrons when annealing temperatures are raised. The results suggest that discharge currents are dominated by the interface layer acting as a quantum well for holes and by direct tunneling for elec-trons.EnglishAnnealingElectric dischargesElectronsGermaniumNanocrystalsPlasma enhanced chemical vapor depositionAnnealing temperaturesDischarge dynamicsGermanium nanocrystal flash memoriesFlash memoryArticle10.1063/1.28354551077-3118