Yu, H. -Y.Battal, E.Okyay, Ali KemalShim, J.Park J. -H.Baek, J. W.Saraswat, K. C.2016-02-082016-02-0820131567-1739http://hdl.handle.net/11693/20871We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.EnglishActivation energyDiffusivityGermaniumIn-situPhosphorusGermaniums (Ge)In-situIn-situ dopingIn-situ processPreexponential factorShallow junctionSpreading resistance profilingTheoretical investigationsActivation energyDiffusionEpitaxial growthGrowth kineticsPhosphorusSemiconductor dopingGermaniumArticle10.1016/j.cap.2013.02.021