Alkis, S.Chowdhury, F. I.Alevli, M.Dietz, N.Yalızay, B.Aktürk, S.Nayfeh, A.Okyay, Ali Kemal2016-02-082016-02-0820152040-8978http://hdl.handle.net/11693/21203In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps. © 2015 IOP Publishing Ltd.EnglishParticlesSolar cellEnhancementExternal quantum efficiencyInternal quantum efficiencyEfficiencyIndium nitrideEnhancement of polycrystalline silicon solar cells efficiency using indium nitride particlesArticle10.1088/2040-8978/17/10/105903