Demirezen, S.Altndal, S.Özçelik, S.Özbay, Ekmel2016-02-082016-02-082010-06-091042-0150http://hdl.handle.net/11693/22127The values of interface states (NSS) and series resistance (RS) of (Ni/Au)-Al0.22Ga0.78N/AlN/GaN heterostructures were obtained from admittance and current-voltage measurements before and after 250kGy 60Co irradiation. The analyses of these data indicate that the values of capacitance and conductance decrease, as the R S increases with increasing dose rate due to the generation of N SS. The increase in RS with increasing dose rate was attributed to two main models. According to the first model, it has been attributed to a direct decrease in the donor concentration in semiconductor material as a result of the elimination of shallow donor states. According to the second model, it is a result of irradiation because of the formation of deep acceptor centers in the semiconductor bulk, and electrons from the shallow donor centers are captured by these acceptors.EnglishAdmittance techniqueI-V measurementsInterface statesRadiation effectSeries resistanceArticle10.1080/10420150.2010.4879051029-4953