Serpengüzel, AliAydınlı, AtillaBek, Alpan2016-02-082016-02-0819971092-8081http://hdl.handle.net/11693/27689Date of Conference: 10-13 November 1997Conference Name: 10th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 1997A microcavity enhancement of room temperature photoluminescence (PL) of a hydrogenated amorphous silicon (a-Si:h) was performed. A quantum confinement model was developed to describe the occurrence of the PL in the bulk a-Si:H. According to the model, small a-Si clusters are in a matrix of a-Si:H. The regions with Si-H, having larger energy gaps due to strong Si-H bonds, isolate these clusters, and form barrier regions around them. The PL originates from these a-Si clusters.EnglishCavity resonatorsChemical bondsChemical vapor depositionEnergy gapGoldMathematical modelsPhotoluminescencePlasma applicationsQuantum theorySemiconducting siliconPlasma enhanced chemical vapor deposition (PECVD)Quantum confinement modelAmorphous siliconConference Paper10.1109/LEOS.1997.630606