Necmi, B.Kimukin, I.Özbay, EkmelTuttle, G.2016-02-082016-02-0820001-55752-634-6http://hdl.handle.net/11693/24952GaAs based photodetectors operating at 1.3 μm that depend on internal photoemission as the absorption mechanism were fabricated. Quantum efficiency (QE) was increased using resonant cavity enhancement (RCE) effect.EnglishCavity resonatorsElectric conductorsLight absorptionMirrorsOhmic contactsPhotoemissionQuantum efficiencySchottky barrier diodesSemiconducting gallium arsenideSemiconductor device manufactureSilicon nitrideFabry-Perot cavityFowler relationMonolithic microfabrication processResonant cavity enhancementSchottky barrier internal photoemission photodetectorPhotodetectors1.3 μm GaAs based resonant cavity enhanced Schottky barrier internal photoemission photodetectorArticle10.1109/CLEO.2000.907129