Zhu, B.Zhang, Z.Tan, S. T.Lu, S.Zhang, Y.Kang, X.Wang, N.Hasanov, N.Demir, Hilmi Volkan2019-02-212019-02-212018-041386-9477http://hdl.handle.net/11693/49942In this work, we report how the Mg doping in the barriers affects the electrical performance of InGaN/GaN-based light-emitting diodes. When compared with the reference device that does not have Mg doped quantum barriers, the turn-on voltage for the proposed device is reduced and the electrical thermal stability is improved. The superior electrical performance is analyzed through the temperature dependent current-voltage and capacitance-voltage characteristics. Meanwhile a reduced depletion length and increased acceptor concentration are achieved in the control devices which is consistent with the simulated results.EnglishArticle10.1016/j.physe.2017.12.0251873-1759