Özbay, EkmelBıyıklı, NecmiKimukin, I.Kartaloglu, T.Tut, T.Aytür, O.2016-02-082016-02-0820041077-260Xhttp://hdl.handle.net/11693/24262Design, fabrication, and characterization of high-performance AI xGa1-xN-based photodetectors for solar-blind applications are reported. AlxGa1-xN heterostructures were designed for Schottky. p-i-n, and metal-semicondnctor-metal (MSM) photodiodes. The solar-blind photodiode samples were fabricated using a microwave compatible fabrication process. The resulting devices exhibited extremely low dark currents. Below 3 fA, leakage currents at 6-V reverse bias were measured on p-i-n samples. The excellent current-voltage (I-V) characteristics led to a detectivity performance of 4.9×1014 cmHz1/2W -1. The MSM devices exhibited photoconductive gain, while Schottky and p-i-n samples displayed 0.09 and 0.11 A/W peak responsivity values at 267 and 261 nm, respectively. A visible rejection of 2×104 was achieved with Schottky samples. High-speed measurements at 267 nm resulted in fast pulse responses with greater than gigahertz bandwidths. The fastest devices were MSM photodiodes with a maximum 3-dB bandwidth of 5.4 GHz.EnglishAlganDetectivityHeterustructureHigh speedMetal-semiconductor-metal (MSM)P-i-nPhotodetectorSchottkySolar blindUltravioletBandwidthElectric currentsFabricationPhotoconductivityPhotodetectorsPhotodiodesSemiconducting aluminum compoundsSemiconducting gallium compoundsSolar energyVoltage measurementAlGaNDetectivityHigh speedMetal-semiconductor-metal (MSM)Solar blindHeterojunctionsArticle10.1109/JSTQE.2004.831681