Sarikavak-Lisesivdin, B.Lisesivdin, S. B.Balkan, N.Atmaca, G.Narin, P.Cakmak, H.Özbay, Ekmel2016-02-082016-02-082015-041073-5623http://hdl.handle.net/11693/24148In this study, electron energy relaxation mechanisms in HEMT structures with different InxGa1−xN-channel quantum well (QW) widths are investigated. Theoretical value of the inelastic scattering rates is carried out at electron temperatures between 30 K (−243 °C) < Te < 700 K (427 °C). We used both the experimentally determined and calculated electron temperatures to estimate the energy relaxation rates of non-equilibrium electrons. In wide InGaN QWs, power loss of an electron is shown to be significantly smaller than that in the narrower QWs. © 2015, The Minerals, Metals & Materials Society and ASM International.EnglishElectron energy levelsElectronsHigh electron mobility transistorsInelastic scatteringSemiconducting indium compoundsSemiconductor quantum wellsElectron energiesEnergy relaxationInelastic scattering rateInGaN quantum wellsN-channelNon-equilibrium electronsPower-lossesTheoretical valuesElectron temperatureArticle10.1007/s11661-015-2762-2