Senger, R. T.Bajaj, K. K.2016-02-082016-02-0820040370-1972http://hdl.handle.net/11693/24271We present a brief description of the calculation of the variation of the binding energy of the heavy-hole exciton as a function of well width in quantum well structures composed of II-VI compound semiconductors including the effects of exciton-optical phonon interaction as formulated by Pollmann and Büttner [J. Pollmann and H. Büttner, Phys. Rev. B 16, 4480 (1977)], and of particle masses and dielectric mismatches between the well and the barrier layers. We compare the results of our calculations with the available experimental data in ZnSe/MgS, ZnSe/Mg0.15Zn0.85Se, and ZnS/Mg0.19Z0.81S quantum well structures and find a good agreementEnglishArticle10.1002/pssb.2004020341521-3951