Özbay, Ekmel2016-02-082016-02-0820050277-786Xhttp://hdl.handle.net/11693/27354Conference name: Proceedings of SPIE, Optoelectronic Devices: Physics, Fabrication, and Application IIDate of Conference: 23-26 October 2005Design, fabrication, and characterization of high-performance AlxGal-xN-based photodetectors for solar-blind applications are reported. AlxGal-xN heterostructures were designed for Schottky, p-i-n, and metal-semiconductor-metal (MSM) photodiodes. The resulting solar-blind AlGaN detectors exhibited low dark current, high detectivity, and high bandwidth.EnglishAlGaNDetectivityHeterostructureHigh-speedMSMp-i-nPhotodetectorSchottkySolar-blindUVBandwidthDesignFabricationHeterojunctionsSchottky barrier diodesSemiconductor metal boundariesUltraviolet detectorsAlGaNDetectivityHigh-speedMetal-semiconductor-metalSolar-blindPhotodetectorsConference Paper10.1117/12.630086