Tut, TurgutGokkavas, MutluInal, AyşeÖzbay, Ekmel2016-02-082016-02-0820070003-6951http://hdl.handle.net/11693/23482The authors report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind photodetectors have a sharp cutoff around 276 nm. The dark currents of the 40 μm diameter devices are measured to be lower than 8 fA for bias voltages up to 20 V. The responsivity of the photodetectors is 0.13 A/W at 272 nm under 20 V reverse bias. The thermally limited detectivity is calculated as D* = 1.4 × 1014 cm Hz1/2 W-1 for a 40 μm diameter device.EnglishAlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gainArticle10.1063/1.27249261077-3118