Hannan, Abdullah2025-05-222025-05-222025-042025-042025-05-20https://hdl.handle.net/11693/117126Cataloged from PDF version of article.Includes bibliographical references (leaves 85-89).Gallium Nitride (GaN) high electron mobility transistor (HEMT) technology is known for its high-power applications due to its wide band-gap and high electron mobility characteristics, which allow the use of larger voltages and currents in the circuit. This enables the design to output a higher RF power for the same gate periphery when compared to other technologies. Broadband driver amplifiers (DAs) operating in the C– and X–bands are commonly used for satellite communications, phased-array radar systems, and, signal generators. Designing an amplifier that achieves both, good small-signal and large-signal performance for such fractional bandwidths remains a challenge today. In this thesis, we present a GaN-on-SiCbased broadband DA monolithic microwave integrated circuit (MMIC) operating at 5-12 GHz. The 3-stage MMIC exhibits a typical small signal gain of 29.7 dB with a ± 1.4 dB gain ripple and input and output reflection losses better than 10.5 dB and 8.5 dB, respectively. The average saturated output power is 2.65 W, with an average power density of 3.31 W/mm. The DA occupies a chip area of 2.7 x 3.2 mm². EM-based cold-FET technique is used to extract the extrinsic parasitic parameters (EPPs) for a typical 6×100 μm HEMT. Various HEMT structures are EM simulated discretely to obtain the scalability rules of the EPPs used for the HEMT model. The DA design is verified using the Process Design Kit (PDK) HEMT models, and the two sets of simulations are compared with the measurement results.xvii, 89 leaves : color illustrations, charts ; 30 cm.Englishinfo:eu-repo/semantics/openAccessGallium nitrideBroadbandDriver amplifierMMICParasitic extractionThesisB134239