Timofeev, F. N.Aydınlı, AtillaEllialtioglu, R.Turkoglu, K.Gure, M.Mikhailov, V. N.Lavrova, O. A.2016-02-082016-02-0819950038-1098http://hdl.handle.net/11693/25915a-SiOx films of varying stoichiometry have been prepared by low temperature plasma enhanced chemical vapor deposition. The majority of films showed photoluminescence (PL) and films prepared in a narrow range of gas flows exhibited much stronger PL after annealing. Peak PL energies ranging from the ultraviolet to the near infrared have been observed. PL, infrared and X-ray diffraction on selected samples indicate formation of Si clusters in the films. The effects of annealing on the PL properties of the films have been found to depend on initial stoichiometry of the films. © 1995.EnglishA. thin filmsD. optical propertiesE. luminescenceAnnealingChemical vapor depositionGasesOptical propertiesPhotoluminescenceSemiconducting siliconStoichiometryThin filmsX ray diffractionLow temperature plasma enhanced chemical vapor depositionQuasi one dimensionalQuasi zero dimensionalSemiconductor nanocrystalSilicon oxidesVisible photoluminescenceOxidesArticle10.1016/0038-1098(95)00299-5