Ünlü, M. S.Gökkavas, M.Onat, B. M.Ata, E.Özbay, EkmelMirin, R. P.Knopp, K. J.Bertness, K. A.Christensen, D. H.2016-02-082016-02-081998-05-250003-6951http://hdl.handle.net/11693/25361High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry-Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.EnglishArticle10.1063/1.121073