Kang, M.Chai, H. J.Jeong, H. B.Park, C.Jung, In-Y.Park, E.Çiçek, Mert MiraçLee, I.Bae, B. S.Durgun, EnginKwak, J. Y.Song, S.Choi, S. Y.Jeong, Hu Y.Kang, K.2022-01-282022-01-282021-05-251936-0851http://hdl.handle.net/11693/76883Ternary metal-oxy-chalcogenides are emerging as next-generation layered semiconductors beyond binary metal-chalcogenides (i.e., MoS2). Among ternary metal-oxy-chalcogenides, especially Bi2O2Se has been demonstrated in field-effect transistors and photodetectors, exhibiting ultrahigh performance with robust air stability. The growth method for Bi2O2Se that has been reported so far is a powder sublimation based chemical vapor deposition. The first step for pursuing the practical application of Bi2O2Se as a semiconductor material is developing a gas-phase growth process. Here, we report a cracking metal–organic chemical vapor deposition (c-MOCVD) for the gas-phase growth of Bi2O2Se. The resulting Bi2O2Se films at very low growth temperature (∼300 °C) show single-crystalline quality. By taking advantage of the gas-phase growth, the precise phase control was demonstrated by modulating the partial pressure of each precursor. In addition, c-MOCVD-grown Bi2O2Se exhibits outstanding electrical and optoelectronic performance at room temperature without passivation, including maximum electron mobility of 127 cm2/(V·s) and photoresponsivity of 45134 A/W.EnglishCracking metal−organic chemical vapor depositionBismuth-oxy-selenideLow-growth temperatureEpitaxial growthField-effect transistorPhotodetectorArticle10.1021/acsnano.1c008111936-086X